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TISPL758LF3D INTEGRATED SYMMETRICAL AND ASYMMETRICAL BIDIRECTIONAL OVERVOLTAGE PROTECTORS FOR LUCENT TECHNOLOGIES L7581/2/3 LINE CARD ACCESS SWITCHES
Copyright (c) 1998, Power Innovations Limited, UK JANUARY 1998 - REVISED OCTOBER 1998
OVERVOLTAGE PROTECTION FOR LUCENT TECHNOLOGIES LCAS
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Symmetrical and Asymmetrical Characteristics for Optimum Protection of Lucent L7581/2/3 LCAS
TERMINAL VDRM V(BO) V V PAIR T-G (SYMMETRICAL) 105 130 R-G (ASYMMETRICAL) +105, -180 +130, -220 CUSTOMISED VERSIONS AVAILABLE
D PACKAGE (TOP VIEW)
T NC NC R
1 2 3 4
8 7 6 5
G G G G
MDXXAE
NC - No internal connection
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Rated for International Surge Wave Shapes
WAVE SHAPE 2/10 s 8/20 s 10/160 s 10/700 s 10/560 s 10/1000 s STANDARD GR-1089-CORE ANSI C62.41 FCC Part 68 ITU-T K20/21 FCC Part 68 GR-1089-CORE ITSP A 175 120 60 50 45 35
device symbol
T R
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Ion-Implanted Breakdown Region Precise And Stable Voltage Low Voltage Overshoot Under Surge Planar Passivated Junctions Low Off-State Current < 10 A Small Outline Surface Mount Package - Available Ordering Options
CARRIER Tube Taped and reeled ORDER # TISPL758LF3D TISPL758LF3DR
SD3XAA
G Terminals T, R and G correspond to the alternative line designators of A, B and C
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condition is low level power cross when the LCAS switches are closed. Under this condition, the TISPL758LF3D limits the voltage and corresponding LCAS dissipation until the LCAS thermal trip operates and opens the switches. Under open-circuit ringing conditions, the line ring (R) conductor will have high peak voltages. For battery backed ringing, the ring conductor will have a larger peak negative voltage than positive i.e. the peak voltages are asymmetric. An overvoltage protector with a similar voltage asymmetry will give the most effective protection. On a connected line, the tip (T) conductor will have much smaller voltage levels than the opencircuit ring conductor values. Here a symmetrical voltage protector gives adequate protection. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. These overvoltages are initially clipped by protector breakdown clamping until the voltage rises to the breakover level, which causes the
description
The TISPL758LF3 is an integrated combination of a symmetrical bidirectional overvoltage protector and an asymmetrical bidirectional overvoltage protector. It is designed to limit the peak voltages on the line terminals of the Lucent Technologies L7581/2/3 LCAS (Line Card Access Switches). An LCAS may also be referred to as a Solid State Relay, SSR, i.e. a replacement of the conventional electromechanical relay. The TISPL758LF3D voltages are chosen to give adequate LCAS protection for all switch conditions. The most potentially stressful
Support from the Microelectronics Group of Lucent Technologies Inc. is gratefully acknowledged in the definition of the TISPL758LF3D voltage levels and for performing TISPL758LF3D evaluations.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.
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TISPL758LF3D INTEGRATED SYMMETRICAL AND ASYMMETRICAL BIDIRECTIONAL OVERVOLTAGE PROTECTORS FOR LUCENT TECHNOLOGIES L7581/2/3 LINE CARD ACCESS SWITCHES
JANUARY 1998 - REVISED OCTOBER 1998
device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. For negative surges, the high crowbar holding current prevents d.c. latchup with the SLIC current, as the surge current subsides. The TISPL758LF3 is guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These protection devices are supplied in a small-outline surface mount (D) plastic package. The difference between the TISPL758LF3D and TISPL758LF3DR versions is shown in the ordering information.
absolute maximum ratings, TA = 25C (unless otherwise noted)
RATING Repetitive peak off-state voltage Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3) 2/10 s (GR-1089-CORE, 2/10 s voltage wave shape) 8/20 s (ANSI C62.41, 1.2/50 s voltage wave shape) 10/160 s (FCC Part 68, 10/160 s voltage wave shape) 5/200 s (VDE 0433, 2.0 kV, 10/700 s voltage wave shape) 0.2/310 s (I3124, 2.0 kV, 0.5/700 s voltage wave shape) 5/310 s (ITU-T K20/21, 2.0 kV, 10/700 s voltage wave shape) 5/310 s (FTZ R12, 2.0 kV, 10/700 s voltage wave shape) 10/560 s (FCC Part 68, 10/560 s voltage wave shape) 10/1000 s (GR-1089-CORE, 10/1000 s voltage wave shape) Non-repetitive peak on-state current (see Notes 1, 2 and 3) full sine wave Repetitive peak on-state current, 50/60 Hz, (see Notes 2 and 3) Initial rate of rise of on-state current, Junction temperature Storage temperature range Exponential current ramp, Maximum ramp value < 70 A 50 Hz 60 Hz ITSM ITSM diT/dt TJ Tstg 16 20 2x1 150 -40 to +150 -40 to +150 A A A/s C C ITSP 175 120 60 50 50 50 50 45 35 A R-G terminals T-G terminals SYMBOL VDRM VALUE -180, +105 -105, +105 UNIT V
NOTES: 1. Above the maximum specified temperature, derate linearly to zero at 150C lead temperature. 2. Initially the TISPL758LF3 must be in thermal equilibrium with 0C < TJ <70C. 3. The surge may be repeated after the TISPL758LF3 returns to its initial conditions.
recommended operating conditions
MIN R1 Series Resistor for GR-1089-CORE Series Resistor for FCC Part 68 R1 first-level surge, operational pass (4.5.7) 10/160 non-operational pass 10/160 operational pass 10/560 non-operational pass 10/560 operational pass R1 Series Resistor for ITU-T K20/21 10/700, < 2 kV, operational pass 10/700, 4 kV, operational pass 20 0 18 0 10 0 40 TYP MAX UNIT
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INFORMATION
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TISPL758LF3D INTEGRATED SYMMETRICAL AND ASYMMETRICAL BIDIRECTIONAL OVERVOLTAGE PROTECTORS FOR LUCENT TECHNOLOGIES L7581/2/3 LINE CARD ACCESS SWITCHES
JANUARY 1998 - REVISED OCTOBER 1998
electrical characteristics for the T-G and R-G terminal pairs, TJ = 25C (unless otherwise noted)
PARAMETER IDRM V(BO) V(BO) IH ID CTG CRG Repetitive peak offstate current Breakover voltage TEST CONDITIONS VD = VDRM , (See Note 4) dv/dt = 250 V/ms, RSOURCE = 300 R-G terminals T-G terminals R-G terminals T-G terminals -220 -130 -240 -140 +100 -150 10 VTG = -5 V, (See Note 5) VTG = -50 V, (See Note 5) 18 10 36 20 VALUE MIN TYP MAX 10 +130 +130 +140 +140 UNIT A V V mA A pF pF
Impulse breakover volt- Rated impulse conditions with operational pass series age Holding current Off-state current Off-state capacitance Off-state capacitance resistor di/dt = -30 mA/ms di/dt = +30 mA/ms 0 < VD < 50 V, TJ = 85C f = 100 kHz, f = 100 kHz, Vd = 1 V rms Vd = 1 V rms
NOTES: 4. Positive and negative values of VDRM are not equal. See ratings table 5. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is connected to the guard terminal of the bridge.
thermal characteristics
PARAMETER RJA Junction to free air thermal resistance MIN TYP MAX 160 UNIT C/W
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INFORMATION
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TISPL758LF3D INTEGRATED SYMMETRICAL AND ASYMMETRICAL BIDIRECTIONAL OVERVOLTAGE PROTECTORS FOR LUCENT TECHNOLOGIES L7581/2/3 LINE CARD ACCESS SWITCHES
JANUARY 1998 - REVISED OCTOBER 1998
PARAMETER MEASUREMENT INFORMATION
+i ITSP Quadrant I Switching Characteristic
ITSM
V(BO)
IH IDRM -v VDRM IDRM IH VD ID ID VD VDRM +v I(BO)
I(BO)
V(BO)
ITSM Quadrant III Switching Characteristic ITSP -i
PMXXAE
Figure 1. ASYMMETRICAL VOLTAGE-CURRENT CHARACTERISTIC FOR R-G TERMINAL PAIR
+i ITSP Quadrant I Switching Characteristic
ITSM
V(BO)
IH IDRM -v VDRM IDRM IH VD ID ID VD VDRM +v I(BO)
I(BO)
V(BO)
ITSM Quadrant III Switching Characteristic ITSP -i
PMXXAH
Figure 2. SYMMETRICAL VOLTAGE-CURRENT CHARACTERISTIC FOR T-G TERMINAL PAIR
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INFORMATION
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TISPL758LF3D INTEGRATED SYMMETRICAL AND ASYMMETRICAL BIDIRECTIONAL OVERVOLTAGE PROTECTORS FOR LUCENT TECHNOLOGIES L7581/2/3 LINE CARD ACCESS SWITCHES
JANUARY 1998 - REVISED OCTOBER 1998
TYPICAL CHARACTERISTICS
OFF-STATE CURRENT vs JUNCTION TEMPERATURE
100 VD = 50 V 10 ID - Off-State Current - A Normalised Breakdown Voltages
TC3MAG
1.2
NORMALISED BREAKDOWN VOLTAGES vs JUNCTION TEMPERATURE TC3MAJA
1.1
1
V(BO) 1.0 VDRM
0*1
0*01
0*001 -25 0 25 50 75 100 125 150 TJ - Junction Temperature - C
0.9 -25 0 25 50 75 100 125 150 TJ - Junction Temperature - C
Figure 3.
Figure 4.
NORMALISED BREAKOVER VOLTAGE vs RATE OF RISE OF PRINCIPLE CURRENT
1.3
TC3MAC
2.0
NORMALISED HOLDING CURRENT vs JUNCTION TEMPERATURE TC3MAHA
NORMALISED HOLDING CURRENT
1.5
1.2
1.0 0.9 0.8 0.7 0.6 0.5
1.1
1.0 0*001
0*01
0*1
1
10
100
-25
0
25
50
75
100
125
150
di/dt - Rate of Rise of Principle Current - A/s
TJ - Junction Temperature - C
Figure 5.
Figure 6.
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INFORMATION
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TISPL758LF3D INTEGRATED SYMMETRICAL AND ASYMMETRICAL BIDIRECTIONAL OVERVOLTAGE PROTECTORS FOR LUCENT TECHNOLOGIES L7581/2/3 LINE CARD ACCESS SWITCHES
JANUARY 1998 - REVISED OCTOBER 1998
APPLICATIONS INFORMATION
LCAS TISPL758LF3D SLIC TBAT
OVERCURRENT PROTECTION TIP WIRE R1a
TLINE
Th1
Th2 RING WIRE R1b RLINE RRINGING TRINGING RBAT VBAT
R2b VRING
R2a
VRINGBAT S4b S4a
RING GENERATOR
Figure 7. LCAS PROTECTION WITH A TISPL758LF3D
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INFORMATION
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TISPL758LF3D INTEGRATED SYMMETRICAL AND ASYMMETRICAL BIDIRECTIONAL OVERVOLTAGE PROTECTORS FOR LUCENT TECHNOLOGIES L7581/2/3 LINE CARD ACCESS SWITCHES
JANUARY 1998 - REVISED OCTOBER 1998
MECHANICAL DATA
D008 plastic small-outline package
This small-outline package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
D008 5,00 (0.197) 4,80 (0.189) 8 7 6 5 Designation per JEDEC Std 30: PDSO-G8
6,20 (0.244) 5,80 (0.228)
4,00 (0.157) 3,81 (0.150)
1
2
3
4
1,75 (0.069) 1,35 (0.053)
7 NOM 3 Places
0,50 (0.020) x 45NOM 0,25 (0.010)
5,21 (0.205) 4,60 (0.181)
0,203 (0.008) 0,102 (0.004) 0,79 (0.031) 0,28 (0.011) Pin Spacing 1,27 (0.050) (see Note A) 6 Places
0,51 (0.020) 0,36 (0.014) 8 Places 0,229 (0.0090) 0,190 (0.0075)
7 NOM 4 Places
4 4
1,12 (0.044) 0,51 (0.020)
ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES
MDXXAA
NOTES: A. B. C. D.
Leads are within 0,25 (0.010) radius of true position at maximum material condition. Body dimensions do not include mold flash or protrusion. Mold flash or protrusion shall not exceed 0,15 (0.006). Lead tips to be planar within 0,051 (0.002).
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INFORMATION
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TISPL758LF3D INTEGRATED SYMMETRICAL AND ASYMMETRICAL BIDIRECTIONAL OVERVOLTAGE PROTECTORS FOR LUCENT TECHNOLOGIES L7581/2/3 LINE CARD ACCESS SWITCHES
JANUARY 1998 - REVISED OCTOBER 1998
MECHANICAL DATA
D008 tape dimensions
D008 Package (8 pin SOIC) Single-Sprocket Tape
4,10 3,90 8,05 7,95 2,05 1,95
1,60 1,50 0,40 0,8 MIN.
5,55 5,45
12,30 11,70
6,50 6,30 Carrier Tape Embossment
o 1,5 MIN.
0 MIN. Direction of Feed 2,2 2,0
Cover Tape
ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. Taped devices are supplied on a reel of the following dimensions:Reel diameter: Reel hub diameter: Reel axial hole: B. 2500 devices are on a reel. 330 +0,0/-4,0 mm 100 2,0 mm 13,0 0,2 mm
MDXXAT
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INFORMATION
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TISPL758LF3D INTEGRATED SYMMETRICAL AND ASYMMETRICAL BIDIRECTIONAL OVERVOLTAGE PROTECTORS FOR LUCENT TECHNOLOGIES L7581/2/3 LINE CARD ACCESS SWITCHES
JANUARY 1998 - REVISED OCTOBER 1998
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. PI assumes no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORISED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright (c) 1998, Power Innovations Limited
PRODUCT
INFORMATION
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